L&D INC.Our Product
AlN-Template on Sapphire
For UVC LED & UVC Sensors
![2inch AlN on Sapphire Template](/wp-content/uploads/con1_img_0523_1-1.jpg)
2inch AlN on Sapphire Template
![2inch AlGaN on AlN/Sapphire Template](/wp-content/uploads/con1_img1.jpg)
2inch AlGaN on AlN/Sapphire Template
![AIN on Sapphire 2”](/wp-content/uploads/con1_img_0523_1-2-1.jpg)
2inch AlN on Sapphire Template
![실사 이미지 사용](/wp-content/uploads/con1_img_0523_1-2-1.jpg)
![AIN on Sapphire 2”](/wp-content/uploads/con1_img_0523_2-2-1.jpg)
2inch AlGaN on AlN/Sapphire Template
![실사 이미지 사용](/wp-content/uploads/con1_img_0523_2-2-1.jpg)
![4inch AlN on Sapphire Template](/wp-content/uploads/con1_img_0523_3.jpg)
4inch AlN on Sapphire Template
![4inch AlN on SiC Template](/wp-content/uploads/con1_img_0523_4.jpg)
4inch AlN on SiC Template
![4inch AlN on Sapphire Template](/wp-content/uploads/con1_img_0523_3-2-1.jpg)
4inch AlN on Sapphire Template
![4inch AlN on Sapphire Template](/wp-content/uploads/con1_img_0523_3-2-1.jpg)
![4inch AlN on SiC Template”](/wp-content/uploads/con1_img_0523_4-2-1.jpg)
4inch AlN on SiC Template
![4inch AlN on SiC Template](/wp-content/uploads/con1_img_0523_4-2-1.jpg)
High Performance
![TEM Image](/wp-content/uploads/con1_img5.jpg)
TEM Image
![AFM Data](/wp-content/uploads/con1_img6.jpg)
AFM Data
Our Technology
High temperature MOCVD design technology
Design of MOCVD, an essential equipment for epi-wafer manufacturing
L&D's Vision
![GaN devices](/wp-content/uploads/con3_img1_en.jpg)
![GaN devices](/wp-content/uploads/con3_img1_m_en.jpg)
![GaN-Buffer layer](/wp-content/uploads/con3_img2_original.png)
Commercial structure
GaN-Buffer layer
L&D,
substitution
![AIN-Buffer layer](/wp-content/uploads/con3_img3_original.png)
L&D’s structure
AIN-Buffer layer
Uses of AIN-Template
![Uses of AIN-Template](/wp-content/uploads/con2_img2_en_v2.png)
![Uses of AIN-Template](/wp-content/uploads/con2_img2_m_en_v2.png)
Key properties of AIN (vs. other materials)
Material | Thermal Expansion Coefficient (ppm/°K) | Thermal Conductivity (W/㎝·°K) |
---|---|---|
GaN : gallium nitride | 5.6 | 1.3 |
AIN : aluminum nitride | 4.3 | 2.8 |
Si(111) : silicon | 3.6 | 1.5 |
SiC : silicon carbide | 4.2 | 3.9 |
![MOCVD System](/wp-content/uploads/con2_img1.jpg)
MOCVD System
- Batch size
- 8pcs/4” ,18pcs/2” (HT-MOCVD)
- Growth temperature
- 1400°C or lower
about MOCVD
A type of chemical vapor deposition (CVD) technologies forming a thin film over the surface of high temperature substrate
Patent registration and application status
Registration date | Title of the rights | Registration number |
---|---|---|
2014. 06 | Multi Chamber Substrate Processing Apparatus using Robot for Transferring Substrate | 10-1409752 |
2017. 08 | Shower head and device for manufacturing a semiconductor substrate having the same | 10-1765754 |
2016. 12 | SUBSTRATE PROCESSING APPARATUS | TW.I560797 |
2017. 05 | CHEMICAL VATPOR DEPOSITION APPARATUS WITH HEAT SHIELD | ZL201210295798.8 |
2021.11 | Active semiconductor devices | 10-2021-0156634 (Application number) |
Company
L&D Inc.
L&D Inc. is an epitaxial wafer specialist
founded by semiconductor experts
with more than 30 years of experience
Our goal is to become the market leader
with our expertise in compound semiconductor epi-wafers,
a key component in electronic devices
and UVC opto-devices, predicted to be in high demand.
Company profile
- Company name
- L&D Inc.
- Core business
-
Manufacture of AIN-based compound semiconductor epi-wafers
Development of growth and manufacturing technologies of epitaxial wafers
- Contact
- talk@lnd35.com
+82 42 382 3335
Locations
- Headquarters
- Research center
179, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea, 302 (Dajeon Startup Park)
80, Daehak-ro, Buk-gu, Daegu, Republic of Korea (Kyungpook National University, Daegu Campus. Semiconductor Research Bldg.)